Synthesis, Properties and Applications of Silicon Nanowire Materials

Abstract

 This study mainly discusses the preparation, properties, applications and potential issues of silicon nanowires(SiNWs). In terms of preparation, the vapor-liquid-solid growth mechanism is adopted, with gold and zinc selected as catalysts, silane as the silicon source, and chemical vapor deposition method used to prepare gold-core and zinc-core silicon nanowires. In the thermoelectric field, SiNWs have a ZT value far exceeding that of ordinary silicon materials, which can significantly reduce thermal conductivity without affecting electrical conductivity. They are suitable for chip waste heat recovery and micro power generation equipment. As a negative electrode material for lithium-ion batteries, SiNWs have high Coulombic efficiency, high energy capacity, long cycle life, and excellent electrical conductivity, making them excellent materials for the negative electrode of lithium-ion batteries. In the field of electronic devices, by controlling the boron doping and phosphorus doping of silicon nanowires, they can exhibit the characteristics of p-type and n-type semiconductors, while the ohmic properties are improved. In addition, highly doped SiNWs have an extremely small Coulomb blockade effect. Therefore, SiNWs can be applied in field-effect transistors (FETs), p-n junctions, and sensors. Meanwhile, their exceptional light-traking ability, outstanding anti-reflection properties, radial p–n junction structure, tunable surface roughness, and high short-circuit current density enable promising applications in solar cells. Despite their promising application potential, the currently high manufacturing costs of SiNWs hinder large-scale adoption, indicating a need for further research in this area.